MAAPGM0029

www.DataSheet4U.com 3.6-6.5 GHz 1W Power Amplifier Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage (4-10V) Operation ♦ GaAs MSAG® Process RO-P-DS-3077 A Preliminary Information MAAPGM0029 Primary Applications ♦ Wireless Local Loop ♦ 3.7- 4.2 GHz SatCom APGM0029 YWWLLLL Description The MAAPGM0029 is a packaged, 2-stage, 1W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Pin Number 1 2 3 4 5 6 7 8 9 10 RF Designator No Connection No Connection RF IN No Connection VGG No Connection No Connection RF OUT No Connection VDD Maximum Operating Conditions 1 Parameter Input Power Drain Supply...