MAAPGM0041-DIE

RO-P-DS-3042- - www.DataSheet4U.com 1.3W X/Ku-Band Power Amplifier 11.0-15.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ MAAPGM0041-DIE 11.0-15.0 GHz GaAs MMIC Amplifier 11.0-15.0 GHz Operation 1.3 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG® MESFET Process Primary Applications ♦ Point-to-Point Radio ♦ SatCom ♦ Radio Location Description The MAAPGM0041-DIE is a 3-stage 1.3 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction SelfAligned Gate (MSAG®) MESFET Process. This process features silicon oxynitride passivation and polyimide scratch protection. Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, VGG = -2V, Pin = 16 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Current Drain Current Output Third Order Intercept Noise Figure 2nd Harmonic 3rd Harmonic Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD OTOI NF 2f 3f Typical 11.0-15.0 31 32 30 20 2:1 1.5:1 <2 < 600 35 6.5 -30 -40 mA mA dBm dB dBc dBc Units GHz dBm % dBm dB 1. TB = MMIC Base Temperature RO-P-DS-3042 - - 2/6 1.3W X/Ku-Band Power Amplifier...