MAAPGM0042-DIE

RO-P-DS-3037- - www.DataSheet4U.com 1.2W X/Ku-Band Power Amplifier 11.5-16.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ MAAPGM0042-DIE 11.5-16.0 GHz GaAs MMIC Amplifier 11.5-16.0 GHz Operation 1.2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG® MESFET Process Primary Applications ♦ Point-to-Point Radio ♦ SatCom ♦ Radio Location Description The MAAPGM0042-DIE is a 3-stage 1.2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction SelfAligned Gate (MSAG®) MESFET Process. This process features silicon oxynitride passivation and polyimide scratch protection. Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, VGG = -2V, Pin = 18 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain VSWR Gate Current Drain Current Output Third Order Intercept Noise Figure 2nd Harmonic 3rd Harmonic Symbol f POUT PAE P1dB G VSWR IGG IDD OTOI NF 2f 3f Typical 11.5-16.0 31 30 28 20 1.9:1 <5 < 600 35 10 -27 -35 mA mA dBm dB dBc dBc Units GHz dBm % dBm dB 1. TB = MMIC Base Temperature RO-P-DS-3037 - - 2/6 1.2W X/Ku-Band Power Amplifier Maximum Operating Condition...