MAAPGM0052-DIE

www.DataSheet4U.com Amplifier, Distributed Power 4.0—18.0 GHz Features ♦ ♦ ♦ ♦ 0.5 Watt Saturated Output Power Level Variable Drain Voltage (5-10V) Operation GaAs MSAG™ Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility MAAPGM0052-DIE 903210 — Preliminary Information Description The MAAPGM0052-Die is a 2-stage distributed power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, IDQ ≈ 500 mA2, Pin = 17 dBm, Rg ≈ 100Ω Parameter Bandwidth Output Power 1dB Compression Point Small Signal Gain Noise Figure Input VSWR Ou...