MAAPGM0064-DIE

www.DataSheet4U.com RoHS Compliant MAAPGM0064-DIE Rev — Preliminary Information Amplifier, Power, 2.0 W 6.5—9.5 GHz Features ♦ ♦ ♦ ♦ 2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAG™ Process High Performance Ceramic Bolt Down Package Description The MAAPGM0064-DIE is a 2-stage 2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction SelfAligned Gate Process. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ ♦ ♦ Multiple Band Point-to-Point Radio SatCom ISM Band Also Available in: Description Part Number Ceramic Package MAAPGM0064 1 SAMPLES Sample Board (Die) MAAP-000064-SMB004 2 Mechanical Sample (Die) Not Available Electrical Characteristics: TB = 40°C , Z0 = 50 Ω, VDD = 8V, IDQ ≈ 600 mA , Pin = 18 dBm, RG ≈ 120Ω Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR...