MAAPSM0015

DC-20 GHz GaAs MMIC Amplifier Preliminary Rev. 2.0 MAAPSM0015 Features ¢ ¢ ¢ ¢ ¢ ¢ ¢ DC-20 GHz GaAs MMIC Amplifier Wide Frequency Range: DC-20 GHz On Chip Bias Network High Gain : 11 dB Gain Flatness: + 0.75 dB Typical Psat: 21 dBm Return Loss: 12 dB Low Bias Current : 100mA 2.0 mm Description The M/A-COM MAAPSM0015 is a medium power wideband AGC amplifier that typically provides 11 dB of gain with 25 dB of AGC range. The circuit topology is a six-section traveling wave amplifier using common source FETs which provide very wide bandwidth. Typical input and output return loss is 12 dB. RF ports are DC coupled, enabling the user to customize system corner frequencies. DC bias can be provided through the drain termination resistor without the need for an external bias inductor. For higher power applications, an external inductor can be used to bias the amplifier through the RFout or Vd_aux pads. Applications include OC-192 12.5 GBit/s receive AGC amplifier and lithium niobate Mach-Zehnder modulator driver amplifer. The MAAPSM0015 requires off-chip decoupling and blocking components. Each device is 100% DC and RF tested on wafer to ensure performance compliance. The device is provided in chip form. M/A-Com fabricates the MAAPSM0015 using a 0.5 µm gate length low noise multi-function self aligned gate (MSAG) MESFET process. This process features silicon nitride passivation and polimide scratch protection. The die thickness is 0.003”. 3.0 mm Primary Applications ¢ ¢ ¢ 12....