MAATGM0001-DIE

www.DataSheet4U.com DC-6.0 GHz Attenuator Features ♦ ♦ ♦ ♦ MAATGM0001-DIE RO-P-DS-3043 B Preliminary Information 6 Bit Attenuator Range 35dB Coverage, LSB = 0.56dB TTL Control Inputs MSAG™ MESFET Process Primary Applications ♦ Satellite Communication ♦ Phased Array Radar Description The MAATGM0001-Die is a 6-bit Attenuator with Parallel Input Control. This product is fully matched to 50 ohms on both the input and output. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, lownoise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ Satellite Communication ♦ Phased Array Radar Electrical Characteristics: TB = 25°C1, Z0 = 50Ω, VEE = -5V Parameter Bandwidth Insertion Loss Input VSWR (At Reference) Output VSWR (At Reference) RMS Attenuation Error Attenuation Range Phase Variation over all Attenuation States Digital Supply Current Input Third Order Intercept, >2 GHz Input 1-dB Compression Point, > 2GHz 1. TB ...