www.DataSheet4U.com
MAC16HCD, MAC16HCM, MAC16HCN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed pri...
www.DataSheet4U.com
MAC16HCD, MAC16HCM, MAC16HCN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full−wave, silicon gate−controlled devices are needed.
Features http://onsemi.com
High Commutating di/dt and High Immunity to dv/dt @ 125°C Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 Blocking
Voltage to 800 Volts On−State Current Rating of 16 Amperes RMS at 80°C High Surge Current Capability − 150 Amperes Industry Standard TO−220AB Package for Ease of Design Glass Passivated Junctions for Reliability and Uniformity Pb−Free Packages are Available*
TRIACS 16 AMPERES RMS 400 thru 800 VOLTS
MT2 G MT1
MARKING DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off−State
Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC16HCD MAC16HCM MAC16HCN On−State RMS Current (Full Cycle Sine Wave 50 to 60 Hz; TC = 80°C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) 16 A Value Unit V 1 2 TO−220AB CASE 221A−09 STYLE 4 x A Y WW G = D, M, or N = Assembly Location = Year = Work Week = Pb−Free Package MAC16HCxG AYWW
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