MAPLST0810-045CF

www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 45W, 26V 5/21/04 Preliminary MAPLST0810-045CF Features Q Package Style Q Q Q Q Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC: Q POUT: 45W (P1dB) Q Gain: 17.5dB Q Efficiency: 50% Ruggedness: 10:1 VSWR @ 45W CW, 26V, 900MHz High Gain, High Efficiency and High Linearity Excellent Thermal Stability P-239 Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 117 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.5 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 865-960 MHz, 45W, 26V MAPLST0810-045CF 5/21/04 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate—Source Leakage Current (VGS = 5 Vdc, VDS = 0) Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µA) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 350 mA) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Input Capacita...