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RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 30W, 26V
10/31/03
Preliminary
MAPLST190...
www.DataSheet4U.com
RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 30W, 26V
10/31/03
Preliminary
MAPLST1900-030CF
Features
Designed for PHS applications in the 1890-1925 MHz frequency band.
Q
Package Style
Q
Typical performance in PHS mode at -68 dBc ACPR (600kHz): Q Average Output Power: 8W Q Gain: 13dB (typ.) Q Efficiency: 26% (typ.) 10:1 VSWR Ruggedness at 8W, 26V, 1890MHz)
MAPLST1900-030CF
Maximum Ratings
Parameter Drain—Source
Voltage Gate—Source
Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W °C °C
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.8 Unit ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
RF Power LDMOS Transistor, 1890 — 1925 MHz, 30W, 26V
MAPLST1900-030CF
10/31/03
Preliminary
Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown
Voltage GS = 0 Vdc, ID = 20 µAdc) OFF(V CHARACTERISTICS Zero Gate
Voltage Drain Leakage Current 26 Vdc, VGS (VDS DS = 65 GS = 0) Gate—Source Leakage Zero Gate
Voltage DrainCurrent Leakage Current (VGS = = 26 5 Vdc, V 0) DS == (V Vdc, V 0) DS GS Gate Threshold
Voltage Gate—Source Leakage Current (VDS = 10 Vdc, ID = 1 mA) (VGS = 5 Vdc, VDS = 0) Gate Quiescent
Voltage ON CHARACTERISTICS (VDS = 26 Vdc, ID = 250 mA) Drain-Source...