MAPLST1900-030CF

www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 30W, 26V 10/31/03 Preliminary MAPLST1900-030CF Features Designed for PHS applications in the 1890-1925 MHz frequency band. Q Package Style Q Typical performance in PHS mode at -68 dBc ACPR (600kHz): Q Average Output Power: 8W Q Gain: 13dB (typ.) Q Efficiency: 26% (typ.) 10:1 VSWR Ruggedness at 8W, 26V, 1890MHz) MAPLST1900-030CF Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.8 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 1890 — 1925 MHz, 30W, 26V MAPLST1900-030CF 10/31/03 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage GS = 0 Vdc, ID = 20 µAdc) OFF(V CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 26 Vdc, VGS (VDS DS = 65 GS = 0) Gate—Source Leakage Zero Gate Voltage DrainCurrent Leakage Current (VGS = = 26 5 Vdc, V 0) DS == (V Vdc, V 0) DS GS Gate Threshold Voltage Gate—Source Leakage Current (VDS = 10 Vdc, ID = 1 mA) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON CHARACTERISTICS (VDS = 26 Vdc, ID = 250 mA) Drain-Source...