MAPLST2122-060CF

www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V 4/6/2005 Preliminary MAPLST2122-060CF Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. Q Q Q Package Style 60W output power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dB ACPR @ 4.096MHz) Q Output Power: 7.5W (typ.) Q Gain: 12dB (typ.) Q Efficiency: 16% (typ.) 10:1 VSWR Ruggedness (CW @ 60W, 28V, 2110MHz) Q MAPLST2122-060CF Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 175 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.0 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V MAPLST2122-060CF 4/6/2005 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage (V GS = 0 Vdc, ID = 20 µAdc) OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS 65 Vdc, VGS DS = 28 GS = 0) Gate—Source Leakage Zero Gate Voltage DrainCurrent Leakage Current (V Vdc, VV 0) DS = = (VGS = =5 26 Vdc, 0) DS GS Symbol Min Typ Ma...