MAPLST2122-090CF

www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 4/6/2005 Preliminary MAPLST2122-090CF Features Q Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power amplifier applications. 90W Output Power at P1dB (CW) 11dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dB ACPR @ 4.096MHz) Q Output Power: 12W (typ.) Q Gain: 12dB (typ.) Q Efficiency: 16% (typ.) 10:1 VSWR Ruggedness (CW @ 60W, 28V, 2110MHz) Q Q Q MAPLST2122-090CF Q Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Drain Current — Continuous Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS ID PD TSTG TJ Rating 65 20 20 206 -40 to +150 +200 Units Vdc Vdc Adc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 0.85 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 2110 — 2170 MHz, 90W, 28V MAPLST2122-090CF 4/6/2005 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage GS = 0 Vdc, ID = 100 µAdc) OFF(V CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 28 Vdc, VGS (VDS DS = 65 GS = 0) Gate—Source Leakage Zero Gate Voltage DrainCurrent Leakage Current (VGS = = 26 5 Vdc, V 0...