MAPR-002729-170M00

www.DataSheet4U.com RoHS Compliant MAPR-002729-170M00 Radar Pulsed Power Transistor 2.7-2.9GHz, 36V, 100µsec, 170W Features 190W, 53% efficiency, typical RF performance 36V, 24W nominal RF input drive Designed for ATC radar applications NPN silicon microwave power transistor Common base, Class-C configuration High efficiency inter-digitated geometry Gold metallization system Internal input and output pre-matching Hermetic metal/ceramic package MAXIMUM RATINGS Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Storage Temperature Junction Temperature Preliminary 1/2007 OUTLINE DRAWING Symbol VCES VEBO IC TSTG TJ Rating 65 3.0 27 -65 to +200 200 Units V V A °C °C ELECTRICAL CHARACTERISTICS AT 25°C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Power Output Power Gain Collector Efficiency Input Return Loss Load Mismatch Stability Load Mismatch Tolerance Symbol BVCES ICES RTH Pout GP Min 65 170 8.5 40 10 - Max 15 0.35 1.5:1 2:1 Units V mA °C/W Wpk dB % dB IC=50mA VCE=36V Test Conditions VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz ηC RL VSWR-S VSWR-T BROADBAND TEST FIXTURE IMPEDANCE F (MHz) 2700 2800 2900 Z IF (Ω) 5.1 – 5.1j 5.2 – ...