MAPRST0912-350

www.DataSheet4U.com MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR 350 Watts, 960 - 1215 MHz, 10μs Pulse Width, 10% Duty Cycle OUTLINE DRAWING Preliminary Specification, Rev 02/03/2004 FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Junction Temperature Storage Temperature VCES VEBO IC PTOT TJ TSTG 65 3.0 32.5 1340 200 -65 to +200 Units V V A W °C °C ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability BVCES ICES RTH POUT 65 350 45 9 - Max 15 0.13 10:1 1.5:1 Units V mA °C/W W % dB IC=50mA VCE=50V Test Conditions VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz VCC=50 V, PIN=40 W, F=960 MHz VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz All spurious signals shall be < -60dBc below carrier, except F = Fo ± ½ Fo shall be < -40dBc ηC RL VSWR-T VSWR-S BROADBAND TEST ...