MAPRST1030-1KS

www.DataSheet4U.com Advanced Datasheet Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing MAXIMUM RATINGS AT 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25° C Junction Temperature Storage Temperature Symbol VCES VEBO IC PTOT TJ TSTG Rating 65 3.0 250 11.6 200 -65 to +200 Units V V A kW °C °C ELECTRICAL CHARACTERISTICS AT 25°C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance RF Power Gain Collector Efficiency Input Return Loss Load Mismatch Stability Load Mismatch Tolerance Symbol BVCES ICES RTH PG Min 65 8.0 45 - Max 30 0.015 -10 1.5:1 3:1 Units V mA °C/W dB % dB IC=250mA VCE=50V Test Conditions VCC=50 V, POUT=1000 W, F= 1.03 GHz VCC=50 V, POUT=1000 W, F= 1.03 GHz VCC=50 V, POUT=1000 W, F= 1.03 GHz VCC=50 V, POUT=1000 W, F= 1.03 GHz VCC=50 V, POUT=1000 W, F= 1.03 GHz VCC=50 V, POUT=1000 W, F= 1.03 GHz ηC RL VSWR-S VSWR-T BROADBAND TEST FIXTURE IMPEDANCE F (GHz) 1.03 Z IF (Ω) 1.8 - j2.2 Z OF (Ω) 0.5 - j1.0 M/A-COM RF Power Innovations 1742 CRENSHAW BLVD TORRANC...