MB84VD22290FA-70

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 32M (×16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 s FEATURES Power Supply Voltage of 2.7 V to 3.1 V High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (SRAM) Operating Temperature –30°C to +85°C Package 59-ball FBGA (Continued) s PRODUCT LINE UP Part No. Supply Voltage(V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MB84VD22280FA/80FE/90FA/90FE VCCf= 3.0 V 70 70 30 +0.1 V –0.3 V VCCs= 3.0 V 70 70 35 +0.1 V –0.3 V Note: Both VCCf and VCCs must be in recommended operation range when either part is being accessed. s PACKAGE 59-ball plastic FBGA (BGA-59P-M02) MB84VD22280FA/FE-70/MB84VD22290FA/FE-70 (Continued) — FLASH MEMORY Simultaneous Read/Write Operations (Dual Bank) FlexBankTM*1 Bank A : 4 Mbit (8 KB × 8 and 64 KB × 7) Bank B : 12 Mbit (64 KB × 24) Bank C : 12 Mbit (64 KB × 24) Bank D : 4 Mbit (64 KB × 8) Two virtual Banks are chosen from the combination of four physical banks Host system can program or erase in one bank, and then read immediately and simultaneously from the other bank with zero latency between read and write operations. Read-while-erase Read-while-program Minimum 100,000 Write/Erase Cycles Sector Erase Architecture Eight 4K word and sixty-three 32K word sectors in word mode Any combinatio...