DatasheetsPDF.com

MBM29DL322BE Datasheet

Part Number MBM29DL322BE
Manufacturers Fujitsu Media Devices
Logo Fujitsu Media Devices
Description (MBM29DL32xTE/BE) FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT
Datasheet MBM29DL322BE DatasheetMBM29DL322BE Datasheet (PDF)

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20881-7E FLASH MEMORY CMOS 32 M (4 M × 8/2 M × 16) BIT Dual Operation MBM29DL32XTE/BE80/90 s DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed.

  MBM29DL322BE   MBM29DL322BE






Part Number MBM29DL322BD-90
Manufacturers Fujitsu
Logo Fujitsu
Description 32M (4M x 8/2M x 16) BIT Dual Operation
Datasheet MBM29DL322BE DatasheetMBM29DL322BD-90 Datasheet (PDF)

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation MBM29DL32XTD/BD -80/90/12 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V.

  MBM29DL322BE   MBM29DL322BE







Part Number MBM29DL322BD-80
Manufacturers Fujitsu
Logo Fujitsu
Description 32M (4M x 8/2M x 16) BIT Dual Operation
Datasheet MBM29DL322BE DatasheetMBM29DL322BD-80 Datasheet (PDF)

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation MBM29DL32XTD/BD -80/90/12 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V.

  MBM29DL322BE   MBM29DL322BE







Part Number MBM29DL322BD-12
Manufacturers Fujitsu
Logo Fujitsu
Description 32M (4M x 8/2M x 16) BIT Dual Operation
Datasheet MBM29DL322BE DatasheetMBM29DL322BD-12 Datasheet (PDF)

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation MBM29DL32XTD/BD -80/90/12 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V.

  MBM29DL322BE   MBM29DL322BE







Part Number MBM29DL322BD
Manufacturers Fujitsu Media Devices
Logo Fujitsu Media Devices
Description (MBM29DL32xBD) 32M (4M X 8/2M X 16) BIT Dual Operation
Datasheet MBM29DL322BE DatasheetMBM29DL322BD Datasheet (PDF)

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation MBM29DL32XTD/BD s FEATURES -80/90/12 • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3..

  MBM29DL322BE   MBM29DL322BE







(MBM29DL32xTE/BE) FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20881-7E FLASH MEMORY CMOS 32 M (4 M × 8/2 M × 16) BIT Dual Operation MBM29DL32XTE/BE80/90 s DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate memory arrays for operations. It is the Fujitsu’s standard 3 V only Flash memories, with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank. (Continued) s PRODUCT LINE UP Part No. Power Supply Voltage VCC (V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29DL32XTE/BE 80 3.3 +0.3 −0.3 90 3.0 +0.6 −0.3 80 80 30 90 90 35 s PACKAGES 48-pin plastic TSOP (1) Marking Side 48-pin plastic TSOP (1) 63-ball plastic FBGA Marking Side (FPT-48P-M19) (FPT-48P-M20) (BGA-63P-M01) MBM29DL32XTE/BE80/90 (Continued) In the MBM29DL32XTE/BE, a new design concept is implemented, so called “Sliding Bank Architecture”. Under this concept, the MBM29DL32XTE/BE can be p.


2007-07-30 : GM5110    GM5110-H    GM5120    GM5120-H    GM5115    GM5115-H    GM5125    GM5125-H    GM5510    GM5511   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)