MBM29DL32xTE

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20881-7E FLASH MEMORY CMOS 32 M (4 M × 8/2 M × 16) BIT Dual Operation MBM29DL32XTE/BE80/90 s DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate memory arrays for operations. It is the Fujitsu’s standard 3 V only Flash memories, with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank. (Continued) s PRODUCT LINE UP Part No. Power Supply Voltage VCC (V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29DL32XTE/BE 80 3.3 +0.3 −0.3 90 3.0 +0.6 −0.3 80 80 30 90 90 35 s PACKAGES 48-pin plastic TSOP (1) Marking Side 48-pin plastic TSOP (1) 63-ball plastic FBGA Marking Side (FPT-48P-M19) (FPT-48P-M20) (BGA-63P-M01) MBM29DL32XTE/BE80/90 (Continued) In the MBM29DL32XTE/BE, a new design concept is implemented, so called “Sliding Bank Architecture”. Under this concept, the MBM29DL32XTE/BE can be p...