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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20906-3E
FLASH MEMORY
CMOS
16 M (2M × 8/1M × 16) BIT
Mirro...
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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20906-3E
FLASH MEMORY
CMOS
16 M (2M × 8/1M × 16) BIT
MirrorFlashTM*
MBM29LV160TM/BM 90
s DESCRIPTION
The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for program or erase operations. The devices can also be reprogrammed in standard EPROM programmers. The standard MBM29LV160TM/BM offers access times of 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. (Continued) MBM29LV160TM/BM 90 3.0 V to 3.6 V 90 ns 90 ns 25 ns
s PRODUCT LINE UP
Part No. VCC Max Address Access Time Max CE Access Time Max OE Access Time
s PACKAGES
48-pin plastic TSOP (1)
Marking Side
48-ball plastic FBGA
(FPT-48P-M19)
(BGA-48P-M20)
* : MirrorFlashTM is a trademark of Fujitsu Limited. Notes : Programming in byte mode ( × 8) is prohibited. Programming to the address that already contains data is prohibited (It is mandatory to erase data prior to overprogram on the same address) .
MBM29LV160TM/BM90
(Continued)
The MBM29LV160TM/BM supports command set compatible with JEDEC single-power-supply EEPROMS standard. Commands are written into...