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MBM29SL800BE Datasheet

Part Number MBM29SL800BE
Manufacturers Fujitsu Media Devices
Logo Fujitsu Media Devices
Description FLASH MEMORY 8M (1M x 8/512K x 16) BIT
Datasheet MBM29SL800BE DatasheetMBM29SL800BE Datasheet (PDF)

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20911-1E FLASH MEMORY CMOS 8 M (1 M × 8/512 K × 16) BIT MBM29SL800TE/BE-90/10 s DESCRIPTION The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TE/BE are offered in a 48-ball FBGA and 45-ball SCSP packages. These devices are designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required fo.

  MBM29SL800BE   MBM29SL800BE






Part Number MBM29SL800BE-90
Manufacturers Fujitsu
Logo Fujitsu
Description FLASH MEMORY 8M (1M x 8/512K x 16) BIT
Datasheet MBM29SL800BE DatasheetMBM29SL800BE-90 Datasheet (PDF)

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 8 M (1 M × 8/512 K × 16) BIT MBM29SL800TE/BE-90/10 DS05-20911-1E s DESCRIPTION The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TE/BE are offered in a 48-ball FBGA and 45-ball SCSP packages. These devices are designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required f.

  MBM29SL800BE   MBM29SL800BE







Part Number MBM29SL800BE-10
Manufacturers Fujitsu
Logo Fujitsu
Description FLASH MEMORY 8M (1M x 8/512K x 16) BIT
Datasheet MBM29SL800BE DatasheetMBM29SL800BE-10 Datasheet (PDF)

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 8 M (1 M × 8/512 K × 16) BIT MBM29SL800TE/BE-90/10 DS05-20911-1E s DESCRIPTION The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TE/BE are offered in a 48-ball FBGA and 45-ball SCSP packages. These devices are designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required f.

  MBM29SL800BE   MBM29SL800BE







Part Number MBM29SL800BD-12
Manufacturers Fujitsu
Logo Fujitsu
Description FLASH MEMORY 8M (1M x 8/512K x 16) BIT
Datasheet MBM29SL800BE DatasheetMBM29SL800BD-12 Datasheet (PDF)

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 8 M (1 M × 8/512 K × 16) BIT MBM29SL800TD/BD-10/12 DS05-20871-5E s DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball SCSP packages. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC .

  MBM29SL800BE   MBM29SL800BE







Part Number MBM29SL800BD-10
Manufacturers Fujitsu
Logo Fujitsu
Description FLASH MEMORY 8M (1M x 8/512K x 16) BIT
Datasheet MBM29SL800BE DatasheetMBM29SL800BD-10 Datasheet (PDF)

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 8 M (1 M × 8/512 K × 16) BIT MBM29SL800TD/BD-10/12 DS05-20871-5E s DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball SCSP packages. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC .

  MBM29SL800BE   MBM29SL800BE







FLASH MEMORY 8M (1M x 8/512K x 16) BIT

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20911-1E FLASH MEMORY CMOS 8 M (1 M × 8/512 K × 16) BIT MBM29SL800TE/BE-90/10 s DESCRIPTION The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TE/BE are offered in a 48-ball FBGA and 45-ball SCSP packages. These devices are designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. VCC Max Address Access Time Max CE Access Time Max OE Access Time 90 ns 90 ns 30 ns MBM29SL800TE/BE-90 MBM29SL800TE/BE-10 100 ns 100 ns 35 ns 1.65 V to 1.95 V s PACKAGES 48-ball Plastic FBGA 45-ball Plastic SCSP (BGA-48P-M20) (WLP-45P-M02) MBM29SL800TE/BE-90/10 (Continued) The standard MBM29SL800TE/BE offer access times 90 ns and 100 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE) , write enable (WE) , and output enable (OE) controls. The device supports pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addr.


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