MBM29SL800TD

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M (1 M × 8/512 K × 16) BIT MBM29SL800TD/BD-10/12 s DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball SCSP packages. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. Ordering Part No. VCC = +2.0 V ± 0.2 Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29SL800TD/MBM29SL800BD −10 100 100 35 −12 120 120 50 s PACKAGES 48-pin Plastic TSOP (I) Marking Side 48-pin Plastic TSOP (I) 48-pin Plastic FBGA 48-pin Plastic SCSP Marking Side (FPT-48P-M19) (FPT-48P-M20) (BGA-48P-M12) (WLP-48P-M03) MBM29SL800TD-10/12/MBM29SL800BD-10/12 (Continued) The standard MBM29SL800TD/BD offer access times 100 ns and 120 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE) , write enable (WE) , and output enable (OE) controls. The MBM29SL800TD/BD are pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timing...