MBR10100G

Schottky Barrier Rectifier INCHANGE Semiconductor MBR10100G FEATURES ·Low Forward Voltage ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High Surge Capacity ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 133℃ 100 V 10 A Peak Repetitive Forward Current IFRM (Rated VR,Square Wave,20kHz) TC= 133℃ 20 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 150 A wave, single phase, 60Hz) IRRM Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) 0.5 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBR10100G THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS IF= 10A ; TC= 125℃ VF Maximum Instantaneous ...