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MBR1630CT

Inchange Semiconductor

Schottky Barrier Rectifier

Schottky Barrier Rectifier FEATURES ·Low Forward Voltage ·150℃ Operating Junction Temperature ·Guaranteed Reverse Avala...


Inchange Semiconductor

MBR1630CT

File Download Download MBR1630CT Datasheet


Description
Schottky Barrier Rectifier FEATURES ·Low Forward Voltage ·150℃ Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High Surge Capacity ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 100℃ 30 21 V 30 16 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed 125 A on rated load conditions IRRM Peak Repetitive Reverse Current (2.0μs, 1.0kHz) 0.5 A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ MBR1630CT isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBR1630CT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS VF Maximum Instantaneous Forward Voltage IF= 8A ; TC= 25℃ IF= 8A ; TC= 125℃ IR Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 25℃ Rated DC Voltage...




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