INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR1645CT
FEATURES ·Low Forward Voltage ·170℃ ...
INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR1645CT
FEATURES ·Low Forward
Voltage ·170℃ Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High Surge Capacity ·Low Stored Charge Majority Carrier Conduction
MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
DC Blocking
Voltage
45
IF(AV) IFSM
Average Rectified Forward Current
(Rated VR) TC= 100℃
Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions
16 210
TJ Junction Temperature
170
V A A ℃
Tstg Storage Temperature Range
-50~170 ℃
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
Schottky Barrier Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
Product Specification
MBR1645CT
MAX 2.0
UNIT ℃/W
ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
VF Maximum Instantaneous Forward
Voltage IF= 8A ; TC= 25℃ IR Maximum Instantaneous Reverse Current VR= 45V, TC= 25℃
MAX 0.69 20
UNIT V μA
isc website:www.iscsemi.cn
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