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MBR20035CTR Datasheet

Part Number MBR20035CTR
Manufacturers Naina Semiconductor
Logo Naina Semiconductor
Description (MBR20020CT - MBR20040CTR) Schottky Power Diode
Datasheet MBR20035CTR DatasheetMBR20035CTR Datasheet (PDF)

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.3 ms Condition.

  MBR20035CTR   MBR20035CTR






Part Number MBR20035CTR
Manufacturers America Semiconductor
Logo America Semiconductor
Description Silicon Power Schottky Diode
Datasheet MBR20035CTR DatasheetMBR20035CTR Datasheet (PDF)

Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

  MBR20035CTR   MBR20035CTR







Part Number MBR20035CTR
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Power Schottky Diode
Datasheet MBR20035CTR DatasheetMBR20035CTR Datasheet (PDF)

Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 to 40 V VRRM • Not ESD Sensitive MBR20020CT thru MBR20040CTR VRRM = 20 V - 40 V IF(AV) = 200 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM.

  MBR20035CTR   MBR20035CTR







(MBR20020CT - MBR20040CTR) Schottky Power Diode

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.3 ms Conditions MBR20020CT (R) 20 14 20 200 MBR20030CT MBR20035CT (R) (R) 30 21 30 200 35 25 35 200 MBR20040CT (R) 40 28 40 200 Units V V V A IFSM 1500 http://www.DataSheet4U.net/ 1500 1500 1500 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 100 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR20020CT (R) 0.68 5 200 MBR20030CT (R) 0.68 5 200 MBR20035CT (R) 0.68 5 200 MBR20040CT (R) 0.68 5 mA 200 Units V DC reverse current IR Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR20020CT (R) 0.5 - 40 to +175 MBR20030CT (R) 0.5 - 40 to +175 MBR20035CT (R) 0.5 - 40 to +175 MBR20040CT (R) 0.5 - 40 to +175 Units o C/W o C 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ Naina .


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