MBR20040CT

Naina Semiconductor Ltd. Features Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.3 ms Conditions MBR20020CT (R) 20 14 20 200 MBR20030CT MBR20035CT (R) (R) 30 21 30 200 35 25 35 200 MBR20040CT (R) 40 28 40 200 Units V V V A IFSM 1500 http://www.DataSheet4U.net/ 1500 1500 1500 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 100 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR20020CT (R) 0.68 5 200 MBR20030CT (R) 0.68 5 200 MBR20035CT (R) 0.68 5 200 MBR20040CT (R) 0.68 5 mA 200 Units V DC reverse current IR Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR20020CT (R) 0.5 - 40 to +175 MBR20030CT (R) 0.5 - 40 to +175 MBR20035CT (R) 0.5 - 40 to +175 MBR20040CT (R) 0.5 - 40 to +175 Units o C/W o C 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ Naina ...