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MBR20150CD Datasheet

Part Number MBR20150CD
Manufacturers INCHANGE
Logo INCHANGE
Description Schottky Barrier Rectifier
Datasheet MBR20150CD DatasheetMBR20150CD Datasheet (PDF)

Schottky Barrier Rectifier MBR20150CD FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·For use in low voltage,high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM IF(AV) IFSM TJ Tstg Peak Repetitive Re.

  MBR20150CD   MBR20150CD






Part Number MBR20150CD
Manufacturers Yangzhou Yangjie
Logo Yangzhou Yangjie
Description Schottky Diode
Datasheet MBR20150CD DatasheetMBR20150CD Datasheet (PDF)

Pin 2 Pin 3 MBR20100CD THRU MBR20200CD RoHS COMPLIANT Pin 1 Schottky Diodes Features ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical Applications Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. Mechanical Data ● Package: TO-252 Molding compound meets UL 94 V-0 flamm.

  MBR20150CD   MBR20150CD







Schottky Barrier Rectifier

Schottky Barrier Rectifier MBR20150CD FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·For use in low voltage,high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM IF(AV) IFSM TJ Tstg Peak Repetitive Reverse Voltage Average Rectified Forward Current Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions Junction Temperature Storage Temperature Range VALUE 150 20 290*2 150 -40~150 UNIT V A A ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF= 10A ; Tc= 25℃ IF= 10A ; Tc= 125℃ 0.9 0.78 IR Maximum Instantaneous Reverse Current VR= 150V; Tc= 25℃ VR= 150V; Tc= 125℃ 0.01 10 UNIT V mA isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier PACKAGE OUTLINE DIMENSIONS MBR20150CD NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our pr.


2020-11-18 : MBR4030CT    MBR4050PT    MBR20150CD    MBR20100CD    MBR20150CD    MBR20200CD    MBR20300C    MBR30300PT    MBRB1060    MBRD20200CT   


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