Rectifier. MBR20H100CT Datasheet

MBR20H100CT Datasheet PDF

Part MBR20H100CT
Description SWITCHMODE Power Rectifier
Feature www.DataSheet4U.com MBR20H100CT, MBRB20H100CT, MBRF20H100CT SWITCHMODE™ Power Rectifier 100 V, 20 A.
Manufacture ON Semiconductor
Datasheet
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MBR20H100CT
www.DataSheet4U.com
MBR20H100CT,
MBRB20H100CT,
MBRF20H100CT
SWITCHMODE
Power Rectifier
100 V, 20 A
Features and Benefits
Low Forward Voltage: 0.64 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
20 A Total (10 A Per Diode Leg)
GuardRing for Stress Protection
PbFree Packages are Available
Applications
Power Supply Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V0 @ 0.125 in
Weight (Approximately):
1.9 Grams (TO220)
1.7 Grams (D2PAK)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Please See the Table on the Following Page
© Semiconductor Components Industries, LLC, 2007
March, 2007 Rev. 4
1
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
1
2, 4
3
4 MARKING
DIAGRAMS
1 23
TO220AB
CASE 221A
STYLE 6
AYWW
B20H100G
AKA
1 23
12
3
ISOLATED TO220
CASE 221D
STYLE 3
AYWW
B20H100G
AKA
4 D2PAK
CASE 418B
STYLE 3
AY WW
B20H100G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B20H100 = Device Code
G = PbFree Device
AKA
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MBR20H100CT/D



MBR20H100CT
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 162°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 160°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
10
20
250
V
A
A
A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
ESD Ratings: Machine Model = C
Human Body Model = 3B
TJ
Tstg
dv/dt
WAVAL
+175
*65 to +175
10,000
200
> 400
> 8000
°C
°C
V/ms
mJ
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
(MBR20H100CT and MBRB20H100CT)
(MBRF20H100CT)
JunctiontoCase
JunctiontoAmbient
JunctiontoCase
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
RqJC
RqJA
RqJC
°C/W
2.0
60
2.5
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 10 A, TC = 25°C)
(IF = 10 A, TC = 125°C)
(IF = 20 A, TC = 25°C)
(IF = 20 A, TC = 125°C)
vF V
0.77
0.64
0.88
0.73
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 125°C)
(Rated DC Voltage, TC = 25°C)
iR mA
6.0
0.0045
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
Package Type
Shipping
MBR20H100CT
TO220
50 Units / Rail
MBR20H100CTG
TO220
(PbFree)
50 Units / Rail
MBRF20H100CTG
TO220FP
(PbFree)
50 Units / Rail
MBRB20H100CTT4G
D2PAK
(PbFree)
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
http://onsemi.com
2




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