Barrier Rectifier. MBR2550CT Datasheet

MBR2550CT Datasheet PDF


Part Number

MBR2550CT

Description

Schottky Barrier Rectifier

Manufacture

Inchange Semiconductor

Total Page 2 Pages
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MBR2550CT
INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR2550CT
FEATURES
·Low power loss, high efficiency.
·High surge capacity.
MECHANICAL CHARACTERISTICS
·in low voltage, high frequency inverters, free wheeling,
and polarity protection applications.
·Metal silicon junction, majority carrier conduction.
·High current capacity, low forward voltage drop.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
IF(AV)
IFSM
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR , Square Wave, 20 KHz) @ TA
= 130°C
Nonrepetitive Peak Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC
method)
50
30
150
TJ Junction Temperature
-65~150
V
A
A
Tstg Storage Temperature Range
-50~175
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

MBR2550CT
INCHANGE Semiconductor
Schottky Barrier Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
Product Specification
MBR2550CT
MAX
1.5
UNIT
/W
ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width300μs,Duty Cycle2%)
SYMBOL
PARAMETER
CONDITIONS
VF Maximum Instantaneous Forward Voltage IF= 15A ; TC= 25
VF Maximum Instantaneous Forward Voltage IF= 15A ; TC=1 25
MAX
0.75
0.65
UNIT
V
V
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Features INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR255 0CT FEATURES ·Low power loss, high ef ficiency. ·High surge capacity. MECHAN ICAL CHARACTERISTICS ·in low voltage, high frequency inverters, free wheeling , and polarity protection applications. ·Metal silicon junction, majority car rier conduction. ·High current capacit y, low forward voltage drop. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA METER VALUE UNIT VRRM IF(AV) IFSM DC Blocking Voltage Average Rectified For ward Current (Rated VR , Square Wave, 2 0 KHz) @ TA = 130°C Nonrepetitive Peak Surge Current 8.3 ms single half-sine- wave Superimposed on rated load (JEDEC method) 50 30 150 TJ Junction Tempera ture -65~150 V A A ℃ Tstg Storage Temperature Range -50~175 ℃ isc we bsite:www.iscsemi.com 1 isc & iscsem i is registered trademark INCHANGE Sem iconductor Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMET ER Rth j-c Thermal Resistance,Junction to Case Product Speci.
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