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MBR30020CT Datasheet

Part Number MBR30020CT
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Power Schottky Diode
Datasheet MBR30020CT DatasheetMBR30020CT Datasheet (PDF)

Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR30020CT thru MBR30040CTR VRRM = 20 V - 40 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30020CT(R) MBR30030CT(R) MBR30035CT(R) MBR30040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VR.

  MBR30020CT   MBR30020CT






Part Number MBR30020CT
Manufacturers America Semiconductor
Logo America Semiconductor
Description Silicon Power Schottky Diode
Datasheet MBR30020CT DatasheetMBR30020CT Datasheet (PDF)

Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

  MBR30020CT   MBR30020CT







Part Number MBR30020CT
Manufacturers Micro Commercial Components
Logo Micro Commercial Components
Description 300 Amp Rectifier 20 to 100 Volts Schottky Barrier
Datasheet MBR30020CT DatasheetMBR30020CT Datasheet (PDF)

MCC Features • • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR30020CT THRU MBR300100CT 300 Amp Schottky Barrier Rectifier 20 to 100 Volts FULL PACK Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high efficiency High surge capacity, High current capability Maximum Ratings • • Operating Temperature: -65°C to +150°C Storage Temperature: -65°C to +150°C Maximum R.

  MBR30020CT   MBR30020CT







Part Number MBR30020CT
Manufacturers Naina Semiconductor
Logo Naina Semiconductor
Description (MBR30020CT - MBR30040CTR) Schottky Power Diode
Datasheet MBR30020CT DatasheetMBR30020CT Datasheet (PDF)

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30020CT thru MBR30040CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.3 ms Condition.

  MBR30020CT   MBR30020CT







Silicon Power Schottky Diode

Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR30020CT thru MBR30040CTR VRRM = 20 V - 40 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30020CT(R) MBR30030CT(R) MBR30035CT(R) MBR30040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR30020CT(R) MBR30030CT(R) MBR30035CT(R) MBR30040CT(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) IF(AV) IFSM TC = 125 °C tp = 8.3 ms, half sine Maximum forward voltage (per leg) VF Rev.


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