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MBR330M Datasheet

Part Number MBR330M
Manufacturers Motorola
Logo Motorola
Description SCHOTTKY BARRIER RECTIFIERS
Datasheet MBR330M DatasheetMBR330M Datasheet (PDF)

® MOTOROLA MBR320M MBR330M MBR340M SCHOTTKY BARRIER RECTIFIERS 3 AMPERE 20, 30, 40 VOLTS HOT CARRIER POWER RECTIFIERS . employing the Schottky Barrier principle in a large area metal-ta-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremelv Low vF • Low Stored Charge, Majority.

  MBR330M   MBR330M






Part Number MBR330P
Manufacturers Motorola
Logo Motorola
Description (MBR3xxP) Axial Lead Rectifiers
Datasheet MBR330M DatasheetMBR330P Datasheet (PDF)

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  MBR330M   MBR330M







Part Number MBR330NG
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description 3.0A Leaded Type Schottky Barrier Rectifiers
Datasheet MBR330M DatasheetMBR330NG Datasheet (PDF)

Schottky Barrier Rectifier MBR320NG THRU MBR3100NG 3.0A Leaded Type Schottky Barrier Rectifiers - 20V-200V Features • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicate.

  MBR330M   MBR330M







Part Number MBR330
Manufacturers Kexin
Logo Kexin
Description Schottky Barrier Rectifier
Datasheet MBR330M DatasheetMBR330 Datasheet (PDF)

DIP Type Schottky Barrier Rectifier MBR320 ~ MBR3100 TransDisiotodress Ƶ Features ƽ Metal silicon junction, majority carrier conduction ƽ Low power loss, high efficiency ƽ High forward surge current capability DO-201AD 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. Dimensions in inches and (millimeters) Ƶ Absolute Maximum Ratings and Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise speci.

  MBR330M   MBR330M







Part Number MBR330
Manufacturers Digitron Semiconductors
Logo Digitron Semiconductors
Description 3 AMP SCHOTTKY RECTIFIERS
Datasheet MBR330M DatasheetMBR330 Datasheet (PDF)

MBR320-MBR360 High-reliability discrete products and engineering services since 1977 3 AMP SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Average rectified forward current @ TA = 65°C (RӨJA = 28°C/W,PC b.

  MBR330M   MBR330M







SCHOTTKY BARRIER RECTIFIERS

® MOTOROLA MBR320M MBR330M MBR340M SCHOTTKY BARRIER RECTIFIERS 3 AMPERE 20, 30, 40 VOLTS HOT CARRIER POWER RECTIFIERS . employing the Schottky Barrier principle in a large area metal-ta-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremelv Low vF • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency • High Surge Capacity II MAXIMUM RATINGS Rating Symbol MBR320M MBR330M MBR340M Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non-Repetitive Peak Reverse Voltage Average Rectified Forward Current VRlequiv)';; 0.2VR Ide), TC = 65°C VRlacuiv).;;0.2VR,lde), TL = 90°C I ROJA= 25 0 C/W, P,C. Board Mounting, See Note 3) VRRM VRWM VR VRSM 10 20 24 . 30 40 Volts 36 48 Volts .,. Amp 15 3.0 Ambient Temperature Rated VR Idel. PFIAV) = 0 ROJA = 250 C/W Non-Repetitive Peak Surge Current (surge applied at rated load conditions. halfwave, single phase60 Hz) TA IFSM J65 60 55 - 500 Ifor 1 cycle) - °c Amp Operating and Storage Junction Temperature Range (Reverse Voltage appl ied) Peak Operating Junction Temperature IForward Current Appl ied) TJ,Tstg TJlpk) - - - -65 to +125 _ . 150 .. °c °c ~, 1-' D K L rC K L, THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case .


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