MBR400100CTR

Naina Semiconductor Ltd. Features Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40045CT thru MBR400100CTR Silicon Schottky Diode, 400A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 125 oC TC = 25 oC tp = 8.3 ms Conditions MBR40045CT (R) 45 32 45 400 MBR40060CT MBR40080CT (R) (R) 60 42 60 400 80 56 80 400 MBR400100C T(R) 100 70 100 400 Units V V V A IFSM 3000 http://www.DataSheet4U.net/ 3000 3000 3000 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 200 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR40045CT (R) 0.68 5 200 MBR40060CT (R) 0.68 5 200 MBR40080CT (R) 0.68 5 200 MBR400100C T(R) 0.68 5 mA 200 Units V DC reverse current IR Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR40045CT (R) 0.35 - 40 to +175 MBR40060CT (R) 0.35 - 40 to +175 MBR40080CT (R) 0.35 - 40 to +175 MBR400100C T(R) 0.35 - 40 to +175 Units o C/W o C 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.ne...