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MBR40080CT Datasheet

Part Number MBR40080CT
Manufacturers Micro Commercial Components
Logo Micro Commercial Components
Description 400 Amp Rectifier 20 to 100 Volts Schottky Barrier
Datasheet MBR40080CT DatasheetMBR40080CT Datasheet (PDF)

MCC Features • • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR40020CT THRU MBR300100CT 400 Amp Schottky Barrier Rectifier 20 to 100 Volts FULL PACK Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high efficiency High surge capacity, High current capability Maximum Ratings • • Operating Temperature: -65°C to +150°C Storage Temperature: -65°C to +150°C Maximum R.

  MBR40080CT   MBR40080CT






Part Number MBR40080CT
Manufacturers Naina Semiconductor
Logo Naina Semiconductor
Description (MBR40045CT - MBR400100CTR) Schottky Power Diode
Datasheet MBR40080CT DatasheetMBR40080CT Datasheet (PDF)

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40045CT thru MBR400100CTR Silicon Schottky Diode, 400A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 125 oC TC = 25 oC tp = 8.3 ms Conditio.

  MBR40080CT   MBR40080CT







Part Number MBR40080CT
Manufacturers America Semiconductor
Logo America Semiconductor
Description Silicon Power Schottky Diode
Datasheet MBR40080CT DatasheetMBR40080CT Datasheet (PDF)

Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

  MBR40080CT   MBR40080CT







Part Number MBR40080CT
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Power Schottky Diode
Datasheet MBR40080CT DatasheetMBR40080CT Datasheet (PDF)

Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR40045CT thru MBR400100CTR VRRM = 45 V - 100 V IF(AV) = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR40045CT(R) MBR40060CT(R) MBR40080CT(R) MBR400100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature.

  MBR40080CT   MBR40080CT







400 Amp Rectifier 20 to 100 Volts Schottky Barrier

MCC Features • • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR40020CT THRU MBR300100CT 400 Amp Schottky Barrier Rectifier 20 to 100 Volts FULL PACK Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high efficiency High surge capacity, High current capability Maximum Ratings • • Operating Temperature: -65°C to +150°C Storage Temperature: -65°C to +150°C Maximum Recurrent Peak Reverse Voltage 20V 30V 35V 40V 45V 60V 80V 100V Maximum DC Blocking Voltage 20V 30V 35V 40V 45V 60V 80V 100V MCC Part Number MBR40020CT MBR40030CT MBR40035CT MBR40040CT MBR40045CT MBR40060CT MBR40080CT MBR400100CT Maximum RMS Voltage 14V 21V 24.5V 28V 31.5V 42V 56V 70V A B K C M J F D H E L G Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage 40020-40045CT 40060CT 40080-400100CT Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance IF(AV) IFSM 400 A 3000A TL = 125°C 8.3ms, half sine IFM = 200 A; TA = 25°C DIM A B C E F G H J K L L DIMENSIONS INCH ES MIN MAX 3.150 NOM 1.565 1.585 .700 .800 .119 .132 1.375 REF 3.55 3.65 .590 .620 1/4 - UNF .380 .410 .185 .195 .275 .295 MM MIN MAX 80.01 NOM 39.75 40.26 17.78 20.32 3.02 3.35 34.92 REF 90.17 92.71 14.99 15.75 FULL 9.65 10.41 4.70 4.95 6.99 7.49 NOTE VF .63 V .75 V .84 V IR 5 mA TA = 25°C ∅.


2005-04-26 : D7088    MTW8N60E    MTW8N60E    MBR1550CT    MBR1560    MBR1560CT    MBR1560CT    MBR1560CT    MBR16100CT    MBR1620   


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