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MBR40120 Datasheet

Part Number MBR40120
Manufacturers INCHANGE
Logo INCHANGE
Description Schottky Barrier Rectifier
Datasheet MBR40120 DatasheetMBR40120 Datasheet (PDF)

Schottky Barrier Rectifier INCHANGE Semiconductor MBR40120 FEATURES ·Low forward voltage ·High surge capacity ·Low Power Loss,High Efficiency ·Guard ring for stress protection ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supply-output rectification ·Power management ·Instrumentation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Bloc.

  MBR40120   MBR40120






Part Number MBR40120
Manufacturers SEMTECH
Logo SEMTECH
Description Schottky Barrier Rectifier
Datasheet MBR40120 DatasheetMBR40120 Datasheet (PDF)

MBR40120 Schottky Barrier Rectifiers Reverse Voltage - 120 V Forward Current - 40 A Features • Plastic package has Underwriters Laboratory Flammability • High Junction Temperature Capability • Low forward voltage, high current capability • High surge capacity • Low power loss, high efficiency SEMTECH Application • AC/DC Switching Adaptor and other Switching Power Supply Maximum Ratings and Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, .

  MBR40120   MBR40120







Schottky Barrier Rectifier

Schottky Barrier Rectifier INCHANGE Semiconductor MBR40120 FEATURES ·Low forward voltage ·High surge capacity ·Low Power Loss,High Efficiency ·Guard ring for stress protection ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supply-output rectification ·Power management ·Instrumentation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 120 V IF(AV) Average Rectified Forward Current 40 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed 330 A on rated load conditions TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 1000 V/μs isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBR40120 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.2 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS IF= 20A ; Tc= 25℃ IF= 20A ; Tc= 125℃ VF Maximum Instantaneous Forward Voltage IF= 40A ; Tc= 25℃ IF= 40A ; Tc= 125℃ VR= VRWM;Tc= 25℃ IR Maximum Instantaneous Reverse Current VR= VRWM;Tc= 125℃ MAX 0.95 0.92 1.02 0.98 1 100 UNIT V mA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any ti.


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