® MOTOROLA
IN5823,lN5824 IN5825
MBRS82S,H, H1
Designers Data Sheet
HOT CARRIER POWER RECTIFIERS
· .. employing the S...
® MOTOROLA
IN5823,lN5824 IN5825
MBRS82S,H, H1
Designers Data Sheet
HOT CARRIER POWER RECTIFIERS
· .. employing the Schottky Barrier principle in a large area metal-
to-silicon power diode. State-of-the-art geometry features epitaxial
construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low-
voltage, high-frequency
inverters, free-wheeling diodes, and polarity-protection diodes.
Extremely Low vF
High Surge Capacity
Low Stored Charge, Majority
TX Version Available
Carrier Conduction Low Power Loss/ High Efficiency
Designer's Data for ~'Worst Case" Conditions
The Designers Data sheets permit the design of most circuits entirely from the information presented. Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
SCHOTTKY BARRIER RECTIFIERS
5 AMPERE 20.30.40 VOLTS
"MAXIMUM RATINGS
Rating
Symbol
1N5823
1 N5824
1N5825 M8R5825H, H1
Unit
Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage
Non~Repet;tjve Peak Reverse
Voltage
RMS Reverse
Voltage
Average Rectified Forward Current VR(equiv)'; 0.2 VR (dc), TC = 75°C VR(equiv)'; 0.2 VR (dc), TL = 80°C R6JA = 25°C/W, P.C. Board Mounting, See Note 3)
VRRM VRWM VR
VRSM
VR(RMS)
10
20
24 14
....
30
36 21
15 5.0
40 Volts
48 Volts 28 Volts
.. Amp
Ambient Temperature Rated VR (dc), PF(AV) = 0 R6JA = 25°C/W
Non-Repetitivel Peak Surge Current (Surge applied at rated load condit...