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MBR600100CT Datasheet

Part Number MBR600100CT
Manufacturers Naina Semiconductor
Logo Naina Semiconductor
Description (MBR60045CT - MBR600100CTR) Schottky Power Diode
Datasheet MBR600100CT DatasheetMBR600100CT Datasheet (PDF)

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 oC TC = 25 oC tp = 8.3 ms Conditio.

  MBR600100CT   MBR600100CT






Part Number MBR600100CT
Manufacturers America Semiconductor
Logo America Semiconductor
Description Silicon Power Schottky Diode
Datasheet MBR600100CT DatasheetMBR600100CT Datasheet (PDF)

Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

  MBR600100CT   MBR600100CT







Part Number MBR600100CT
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Power Schottky Diode
Datasheet MBR600100CT DatasheetMBR600100CT Datasheet (PDF)

Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR60045CT(R) MBR60060CT(R) MBR60080CT(R) MBR600100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature.

  MBR600100CT   MBR600100CT







(MBR60045CT - MBR600100CTR) Schottky Power Diode

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 oC TC = 25 oC tp = 8.3 ms Conditions MBR60045CT (R) 45 32 45 600 MBR60060CT MBR60080CT (R) (R) 60 42 60 600 80 56 80 600 MBR600100C T(R) 100 70 100 600 Units V V V A IFSM 4000 http://www.DataSheet4U.net/ 4000 4000 4000 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 300 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR60045CT (R) 0.75 1 20 MBR60060CT (R) 0.85 1 20 MBR60080CT (R) 0.88 1 20 MBR600100C T(R) 0.88 1 mA 20 Units V DC reverse current IR Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR60045CT (R) 0.12 - 40 to +165 MBR60060CT (R) 0.12 - 40 to +165 MBR60080CT (R) 0.12 - 40 to +165 MBR600100C T(R) 0.12 - 40 to +165 Units o C/W o C 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ .


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