Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability U...
Naina Semiconductor Ltd.
Features
Guard Ring Protection Low forward
voltage drop High surge current capability Up to 100V VRRM
MBR60020CT thru MBR60040CTR
Silicon Schottky Diode, 600A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse
voltage RMS reverse
voltage DC blocking
voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 oC TC = 25 oC tp = 8.3 ms Conditions MBR60020CT (R) 20 14 20 600 MBR60030CT MBR60035CT (R) (R) 30 21 30 600 35 25 35 600 MBR60040CT (R) 40 28 40 600 Units V V V A
IFSM
4000
http://www.DataSheet4U.net/
4000
4000
4000
A
Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward
voltage Symbol VF Conditions IF = 300 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR60020CT (R) 0.75 1 20 MBR60030CT (R) 0.75 1 20 MBR60035CT (R) 0.75 1 20 MBR60040CT (R) 0.75 1 mA 20 Units V
DC reverse current
IR
Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR60020CT (R) 0.12 - 40 to +165 MBR60030CT (R) 0.12 - 40 to +165 MBR60035CT (R) 0.12 - 40 to +165 MBR60040CT (R) 0.12 - 40 to +165 Units
o
C/W
o
C
1
D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653
[email protected] www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
Naina ...