MBR60080CT

Naina Semiconductor Ltd. Features Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 oC TC = 25 oC tp = 8.3 ms Conditions MBR60045CT (R) 45 32 45 600 MBR60060CT MBR60080CT (R) (R) 60 42 60 600 80 56 80 600 MBR600100C T(R) 100 70 100 600 Units V V V A IFSM 4000 http://www.DataSheet4U.net/ 4000 4000 4000 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 300 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR60045CT (R) 0.75 1 20 MBR60060CT (R) 0.85 1 20 MBR60080CT (R) 0.88 1 20 MBR600100C T(R) 0.88 1 mA 20 Units V DC reverse current IR Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR60045CT (R) 0.12 - 40 to +165 MBR60060CT (R) 0.12 - 40 to +165 MBR60080CT (R) 0.12 - 40 to +165 MBR600100C T(R) 0.12 - 40 to +165 Units o C/W o C 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ ...