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MBR6020 Diode Datasheet PDFSilicon Power Schottky Diode Silicon Power Schottky Diode |
　
　
　
| Part Number | MBR6020 |
|---|---|
| Description | Silicon Power Schottky Diode |
| Feature | Silicon Power Schottky Diode
Features †¢ High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cat hode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR6020 thru M BR6040R VRRM = 20 V - 40 V IF = 60 A DO -5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" d evices have leads reversed) Parameter Symbol Conditions MBR6020 (R) MBR603 0 (R) MBR6035 (R) MBR6040 (R) Repetiti ve peak reverse voltage RMS reverse vol tage DC blocking voltage Continuous for ward current Surge non-repetitive forwa rd current, Half Sine . |
| Manufacture | GeneSiC |
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| Part Number | MBR6020 |
|---|---|
| Description | (MBR6020 - MBR60100) SCHOTTKY DIODES |
| Feature | Transys
Electronics
L I M I T E D
MBR60 20(R) THRU MBR60100(R)
SCHOTTKY DIODES STUD TYPE
60 A
60Amp Rectifier 20-100 Volts
Features
High Surge Capability Types up to100V V RRM
DO-5
www. DataShe et4U. com Maximum Ratings Operating Tem perature: -65 C to +150 N B Storage T emperature: -65 C to +175 M C J Part Number MBR6020(R) MBR6030(R) MBR6035(R ) MBR6040(R) MBR6045(R) MBR6060(R) MBR6 080(R) MBR60100(R) Maximum Recurrent P eak Reverse Voltage 20V 30V 35V 40V 45V 60V 80V 100V Maximum RMS Voltage 14V 21V 25V 28V 32V 42V 50V 70V Maximum DC Blocking Voltage 20V 30V 35V 40V 45V 6 0V 80V 100V K . |
| Manufacture | TRANSYS Electronics |
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| Part Number | MBR6020 |
|---|---|
| Description | (MBR6020 - MBR6040R) Schottky Power Diode |
| Feature | Naina Semiconductor Ltd. Schottky Power Diode, 60A Features • • • • • Fast Switching Low forward voltage dro p High surge capability High efficiency , low power loss Normal and Reverse pol arity MBR6020 thru MBR6040R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unl ess otherwise noted) Parameter Test Con ditions Symbol MBR6020(R) MBR6030(R) MB R6035(R) MBR6040(R) Units Repetitive p eak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward c urrent, half-sine wave Forward voltage TC ≤ 100 C TC = 25oC IF = 60 A TJ = 2 5oC VR = 20V, TJ = 25oC VR . |
| Manufacture | Naina Semiconductor |
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