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MBR6020 Diode Datasheet PDF

Silicon Power Schottky Diode

Silicon Power Schottky Diode

 

 

 

Part Number MBR6020
Description Silicon Power Schottky Diode
Feature Silicon Power Schottky Diode Features High Surge Capability
• Types from 20 V to 40V VRRM
• Not ESD Sensitive Note: 1.
Standard polarity: Stud is cat hode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
MBR6020 thru M BR6040R VRRM = 20 V - 40 V IF = 60 A DO -5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" d evices have leads reversed) Parameter Symbol Conditions MBR6020 (R) MBR603 0 (R) MBR6035 (R) MBR6040 (R) Repetiti ve peak reverse voltage RMS reverse vol tage DC blocking voltage Continuous for ward current Surge non-repetitive forwa rd current, Half Sine .
Manufacture GeneSiC
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Part Number MBR6020
Description (MBR6020 - MBR60100) SCHOTTKY DIODES
Feature Transys Electronics L I M I T E D MBR60 20(R) THRU MBR60100(R) SCHOTTKY DIODES STUD TYPE 60 A 60Amp Rectifier 20-100 Volts Features High Surge Capability Types up to100V V RRM DO-5 www.
DataShe et4U.
com Maximum Ratings Operating Tem perature: -65 C to +150 N B Storage T emperature: -65 C to +175 M C J Part Number MBR6020(R) MBR6030(R) MBR6035(R ) MBR6040(R) MBR6045(R) MBR6060(R) MBR6 080(R) MBR60100(R) Maximum Recurrent P eak Reverse Voltage 20V 30V 35V 40V 45V 60V 80V 100V Maximum RMS Voltage 14V 21V 25V 28V 32V 42V 50V 70V Maximum DC Blocking Voltage 20V 30V 35V 40V 45V 6 0V 80V 100V K .
Manufacture TRANSYS Electronics
Datasheet
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Part Number MBR6020
Description (MBR6020 - MBR6040R) Schottky Power Diode
Feature Naina Semiconductor Ltd.
Schottky Power Diode, 60A Features




• Fast Switching Low forward voltage dro p High surge capability High efficiency , low power loss Normal and Reverse pol arity MBR6020 thru MBR6040R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unl ess otherwise noted) Parameter Test Con ditions Symbol MBR6020(R) MBR6030(R) MB R6035(R) MBR6040(R) Units Repetitive p eak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward c urrent, half-sine wave Forward voltage TC ≤ 100 C TC = 25oC IF = 60 A TJ = 2 5oC VR = 20V, TJ = 25oC VR .
Manufacture Naina Semiconductor
Datasheet
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