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MBR7540R DIODES Datasheet PDF

(MBR7520 - MBR75100R) SCHOTTKY DIODES

(MBR7520 - MBR75100R) SCHOTTKY DIODES

 

 

 

Part Number MBR7540R
Description (MBR7520 - MBR75100R) SCHOTTKY DIODES
Feature Transys Electronics L I M I T E D MBR75 20(R) THRU MBR75100(R) SCHOTTKY DIODES STUD TYPE 75 A 75Amp Rectifier 20-100 Volts Features High Surge Capability Types up to100V V RRM DO-5 Maximum Ra tings Operating Temperature: -65 C to + 150 Storage Temperature: -65 C to +175 M C J N B Part Number MBR7520(R) MBR7 530(R) MBR7535(R) MBR7540(R) MBR7545(R) MBR7560(R) MBR7580(R) MBR75100(R) Max imum Recurrent Peak Reverse Voltage 20V 30V 35V 40V 45V 60V 80V 100V Maximum RMS Voltage 14V 21V 25V 28V 32V 42V 50V 70V Maximum DC Blocking Voltage 20V 3 0V 35V 40V 45V 60V 80V 100V http://www.
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Manufacture TRANSYS
Datasheet
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Part Number MBR7540R
Description Silicon Power Schottky Diode
Feature Silicon Power Schottky Diode Features High Surge Capability
• Types from 20 V to 40 V VRRM
• Not ESD Sensitive Note: 1.
Standard polarity: Stud is ca thode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
MBR7520 thru MBR7540R VRRM = 20 V - 40 V IF(AV) = 75 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ( "R" devices have leads reversed) Param eter Symbol Conditions MBR7520(R) MB R7530(R) MBR7535(R) MBR7540(R) Unit Re petitive peak reverse voltag RMS revers e voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 .
Manufacture GeneSiC
Datasheet
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Part Number MBR7540R
Description (MBR7520 - MBR7540R) Schottky Power Diode
Feature Naina Semiconductor Ltd.
Schottky Power Diode, 75A Features




• Fast Switching Low forward voltage dro p High surge capability High efficiency , low power loss Normal and Reverse pol arity MBR7520 thru MBR7540R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unl ess otherwise noted) Parameter Test Con ditions Symbol MBR7520(R) MBR7530(R) MB R7535(R) MBR7540(R) Units Repetitive p eak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward c urrent, half-sine wave Forward voltage TC ≤ 100 C TC = 25oC IF = 75 A TJ = 2 5oC VR = 20V, TJ = 25oC VR .
Manufacture Naina Semiconductor
Datasheet
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