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MBR780 Datasheet

Part Number MBR780
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Schottky Barrier Rectifier
Datasheet MBR780 DatasheetMBR780 Datasheet (PDF)

Schottky Barrier Rectifier INCHANGE Semiconductor MBR780 FEATURES ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability,Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA.

  MBR780   MBR780






Part Number MBR780
Manufacturers MDD
Logo MDD
Description SCHOTTKY BARRIER RECTIFIER
Datasheet MBR780 DatasheetMBR780 Datasheet (PDF)

MBR720 THRU MBR7100 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -7.5 Amperes TO-220AC 0.160 (4.05) 0.140 (3.55) 0.105 (2.67) 0.095 (2.41) 0.415(10.54) MAX 0.410(10.41) 0.390(9.91) PIN 12 0.154(3.91) DIA 0.148(3.74) 0.113(2.87) 0.103(2.62) 0.635(16.13) 0.625(15.87) 0.185(4.70) 0.175(4.44) 0.057(1.45) 0.051(1.30) 0.145(3.68) 0.135(3.43) 0.350(8.89) 0.330(8.38) 0.560(14.2) 0.530(13.4) 1.148(29.16) 1.118(28.40) 0.590(14.22) 0.530(13.46) 0.110(2.79) 0.100(2..

  MBR780   MBR780







Part Number MBR780
Manufacturers Hornby
Logo Hornby
Description SCHOTTKY BARRIER RECTIFIER
Datasheet MBR780 DatasheetMBR780 Datasheet (PDF)

MBR735 THRU MBR7200 SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE: 35 to 200 VOLTS FORWARD CURRENT: 7.5 AMPERE FEATURES · Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 · Metal silicon junction, majority carrier conduction · Guard ring for overvoltage protection · Low power loss, high efficiency · For use in low voltage,high frequency inverters,free whelling,and polarity protection applications · High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.

  MBR780   MBR780







Schottky Barrier Rectifier

Schottky Barrier Rectifier INCHANGE Semiconductor MBR780 FEATURES ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability,Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 125℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 80 56 7.5 150 V V A A TJ Junction Temperature -50~150 ℃ Tstg Storage Temperature Range -50~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered tra.


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