MBR850

www.DataSheet4U.com MBR850 thru MBR860 Dimensions TO-220AC A C Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers C(TAB) A C A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 VRMS V 35 42 VDC V 50 60 MBR850 MBR860 Symbol I(AV) IFSM dv/dt VF Characteristics Maximum Average Forward Rectified Current @TC=125oC Maximum Ratings 8 150 10000 IF=8A @TJ=125oC IF=8A @TJ=25oC IF=16A @TJ=25oC @TJ=25oC @TJ=125oC 0.70 0.80 0.95 0.1 15 3.0 250 -55 to +150 -55 to +175 Unit A A V/us V Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1) Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range IR ROJC CJ TJ TSTG mA o C/W pF o o C C NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient prot...