Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRB20100CT
FEATURES ·Schottky barrier chip ·Low Power Loss,High Eff...
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRB20100CT
FEATURES ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For use in high frequency rectifier of switching mode
power supplies,freewheeling diodes,DC-to-DC converters or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRMS
VR
IF(AV)
Peak Repetitive Reverse
Voltage RMS
Voltage DC Blocking
Voltage
Average Rectified Forward Current
100 V 20 A
Nonrepetitive Peak Surge Current
IFSM 8.3ms single half sine-wave superimposed on 150 rated load conditions
A
TJ Junction Temperature
-65~150 ℃
Tstg Storage Temperature Range
-65~175 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRB20...