Rectifier. MBRB2535CTLG Datasheet

MBRB2535CTLG Datasheet PDF


Part MBRB2535CTLG
Description SWITCHMODE Power Rectifier
Feature MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Pa.
Manufacture ON Semiconductor
Datasheet
Download MBRB2535CTLG Datasheet


MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Powe MBRB2535CTLG Datasheet




MBRB2535CTLG
MBRB2535CTLG,
NRVBB2535CTLG
Preferred Device
SWITCHMODE
Power Rectifier
D2PAK Surface Mount Power Package
The D2PAK Power Rectifier employs the Schottky Barrier principle
in a large metaltosilicon power diode. Stateoftheart geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for use in low voltage, high frequency
switching power supplies, free wheeling diodes, and polarity
protection diodes. These stateoftheart devices have the following
features:
Features
CenterTap Configuration
Guardring for Stress Protection
Low Forward Voltage
125C Operating Junction Temperature
Epoxy Meets UL 94, V0 @ 0.125 in
Short Heatsink Tab Manufactured Not Sheared
Similar in Size to the Industry Standard TO220 Package
AECQ101 Qualified and PPAP Capable
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are PbFree*
Mechanical Characteristics
Case: Epoxy, Molded, Epoxy Meets UL 94, V0
Weight: 1.7 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 8000 V)
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 7
1
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
25 AMPERES, 35 VOLTS
D2PAK
CASE 418B
STYLE 3
1
4
3
MARKING DIAGRAM
AYWW
B2535LG
AKA
A = Assembly Location
Y = Year
WW = Work Week
B2535L = Device Code
G = PbFree Package
AKA = Diode Polarity
ORDERING INFORMATION
Device
MBRB2535CTLG
NRVBB2535CTLG
MBRB2535CTLT4G
NRVBB2535CTLT4G
Package
D2PAK
(PbFree)
D2PAK
(PbFree)
D2PAK
(PbFree)
D2PAK
(PbFree)
Shipping
50 Units/Rail
50 Units/Rail
800 /
Tape & Reel
800 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBRB2535CTL/D



MBRB2535CTLG
MBRB2535CTLG, NRVBB2535CTLG
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, (Rated VR, TC = 110C)
Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 90C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
35
12.5
25
150
V
A
A
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg 65 to +150
C
Operating Junction Temperature
TJ 65 to +125 C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
1. When mounted using minimum recommended pad size on FR4 board.
Symbol
RRqqJJCA
Value
1.0
84
Unit
C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 25 A, TJ = 25C)
(iF = 12.5 A, TJ = 125C)
(iF = 12.5 A, TJ = 25C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125C)
(Rated dc Voltage, TJ = 25C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
vF
IR
Value
0.55
0.41
0.47
500
10
Unit
V
mA
http://onsemi.com
2






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