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MBRB3060CT

First Silicon

Dual Schottky Barrier Rectifiers

SEMICONDUCTOR TECHNICAL DATA MBR3060CT, MBRF3060CT, MBRB3060CT Dual Schottky Barrier Rectifiers Reverse Voltage 60 Vol...


First Silicon

MBRB3060CT

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SEMICONDUCTOR TECHNICAL DATA MBR3060CT, MBRF3060CT, MBRB3060CT Dual Schottky Barrier Rectifiers Reverse Voltage 60 Volts Forward Current 30.0 Amperes Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Dual rectifier construction, positive center tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.35mm) from case Mechanical Data Case: JEDEC TO-220AB, TO-220F , TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 ounce, 2.24 grams TO-220AB TO-220F TO-263AB(D2PAK) Mounting Pad Layout TO-263AB Dimensions in inches and (millimeters) 2012. 03. 05 Revision No : 0 1/3 MBR3060CT, MBRF3060CT, MBRB3060CT Maximum Ratings and Electrical Characteristics ( TC = 25oC unless otherwise noted ) MAXIMUM RATINGS and ELECTRICAL CHARACTERISTICS(TC=25°C unless otherwise moted) PARAMETER TEST CONDITIONS SYMBOL MBRF3060CT Maximum repetitive peak reverse voltage VRRM 60 Working peak reverse voltage VRWM 60 Maximum DC blocking voltage VDC 60 Maximum average forward rectified current at Tc=105°C total device per diode IF(AV) 30 15 Peak forward surge current 8.3ms single hal...




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