MBRD1060CT

MBRD1060CT Technical Data Data Sheet N0804, Rev. A MBRD1060CT SCHOTTKY RECTIFIER DPAK Circuit Diagram Features  150℃ TJ operation  Center tap configuration  Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  “-A” is an AEC-Q101 qualified device  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request Applications  Switching power supply  Converters  Free-Wheeling diodes  Reverse battery protection  Battery charging Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Peak One Cycle Non-Repetitive Surge Current(peg leg) Symbol VRRM VRWM VR IF (AV) IFSM Condition - 50% duty cycle @TC =100°C, rectangular wave form 8.3 ms, half Sine pulse Max. 60 5(peg leg) 10(peg device) 125 Units V A A Electrical Characteristics: Characteristics Forward Voltage Drop (per leg) * Reverse Current (per leg) * Junction Capacitance(per leg) * Pulse width < 300 µs, duty cycle < 2% Symbol VF1 VF2 IR1 IR2 CT Condition @ 5A, Pulse, TJ = 25 C @ 5A, Pulse, TJ = 125 C @VR = rated VR, TJ = 25 C @VR = rated VR, TJ = 125 C @VR = 5V, TC = 25 C, fSIG = 1MHz Typ. 0.65 0.60 0.008 3 180 Max. 0.70 0.65 1.0 20 300 Units V V mA mA pF  China - Germany - Korea ...