MBRH240100

Silicon Power Schottky Diode Features High Surge Capability Types from 45 V to 100 V VRRM Not ESD Sensitive MBRH24045 thru MBRH240100R VRRM = 45 V - 100 V IF(AV) = 240 A D-67 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRH24045(R) MBRH24060(R) MBRH24080(R) MBRH240100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 60 80 100 V 32 42 57 70 V 45 60 80 100 V -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRH24045(R) MBRH24060(R) MBRH24080(R) MBRH240100(R) Unit Average forward current (per pkg) IF(AV) TC = 125 °C 240 240 240 240 A Peak forward surge current IFSM tp = 8.3 ms, half sine 3300 3300 3300 3300 A Maximum instantaneous forward voltage VF IFM = 240 A, Tj = 25 °C 0.72 0.78 Maximum instantaneous Tj = 25 °C 1 1 reverse current at rated DC IR Tj = 100 °C 10 10 blocking voltage Tj = 150 °C 50 50 Thermal characteristics Thermal resistance, junctioncase RΘJC 0.30 0.30 0.84 1 10 50 0.30 0.84 V 1 10 mA 50 0.30 °C/W Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrh240100.pdf 1 MBRH24045 thru MBRH240100R Oct. 2018 http://www.diodemodule.com/silicon_pro...