Silicon Power Schottky Diode
Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive
MBRH2...
Silicon Power Schottky Diode
Features High Surge Capability Types from 45 V to 100 V VRRM Not ESD Sensitive
MBRH24045 thru MBRH240100R
VRRM = 45 V - 100 V IF(AV) = 240 A
D-67 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol Conditions
MBRH24045(R) MBRH24060(R) MBRH24080(R) MBRH240100(R) Unit
Repetitive peak reverse
voltage RMS reverse
voltage DC blocking
voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
45
60
80
100
V
32
42
57
70
V
45
60
80
100
V
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Conditions
MBRH24045(R) MBRH24060(R) MBRH24080(R) MBRH240100(R) Unit
Average forward current (per pkg)
IF(AV)
TC = 125 °C
240
240
240
240
A
Peak forward surge current IFSM tp = 8.3 ms, half sine
3300
3300
3300
3300
A
Maximum instantaneous forward
voltage
VF IFM = 240 A, Tj = 25 °C
0.72
0.78
Maximum instantaneous
Tj = 25 °C
1
1
reverse current at rated DC IR
Tj = 100 °C
10
10
blocking
voltage
Tj = 150 °C
50
50
Thermal characteristics
Thermal resistance, junctioncase
RΘJC
0.30
0.30
0.84 1 10 50
0.30
0.84
V
1
10
mA
50
0.30
°C/W
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbrh240100.pdf
1
MBRH24045 thru MBRH240100R
Oct. 2018
http://www.diodemodule.com/silicon_pro...
