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MBRS360P

ON Semiconductor

Surface Mount Schottky Power Rectifier

MBRS360P Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area meta...


ON Semiconductor

MBRS360P

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Description
MBRS360P Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection These are Pb−Free Devices Mechanical Characteristics Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 Weight: 217 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: ♦ Machine Model, C ♦ Human Body Model, 3B www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS SMC CASE 403AC MARKING DIAGRAM AYWW B36G G B36 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRS360PT3G SMC (Pb−Free) 2,500 / Tape & Reel †For i...




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