MC3424DV

Freescale These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Si 34 24 DV/ MC34 24 DV N-Channel Logic Level MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.027 @ VGS = 10 V 30 0.035 @ VGS = 4.5V ID (A) 6.3 5.5 1 6 5 4 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS Drain-Source Voltage 30 V ±20 Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current b a a o TA=25 C TA=70 C o o ID IDM IS 6.3 5.2 ±20 1.3 1.6 1.0 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RT HJA Maximum Units 78.0 o t <= 5 sec C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature www.freescale.net.cn 1 Free Datasheet http://www.datasheet4u.com/ Freescale SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Par...